DocumentCode
136786
Title
A physical modeling method for NPT IGBTs verified by experiments
Author
Jinlei Meng ; Puqi Ning ; Xuhui Wen
Author_Institution
Univ. of Chinese Acad. of Sci., Beijing, China
fYear
2014
fDate
Aug. 31 2014-Sept. 3 2014
Firstpage
1
Lastpage
6
Abstract
This paper presents a physical modeling method for Non Punch Through (NPT) Insulated Gate Bipolar Transistors (IGBTs). The model is based on the solution to ambipolar diffusion equation (ADE) and can be achieved by engineering software MATLAB or PSPICE. The presented model is verified by experiments. With an interface between the presented model and thermal model of IGBT module, the model can be extended to thermo-electric model easily.
Keywords
insulated gate bipolar transistors; ADE; MATLAB; NPT IGBT; PSPICE; ambipolar diffusion equation; engineering software; non punch through insulated gate bipolar transistors; physical modeling method; thermal model; thermoelectric model; Capacitance; Equations; Insulated gate bipolar transistors; Integrated circuit modeling; Load modeling; Mathematical model; Semiconductor device modeling; Insulated Gate Bipolar Transistor; MATLAB; ambipolar diffusion equation; physical model;
fLanguage
English
Publisher
ieee
Conference_Titel
Transportation Electrification Asia-Pacific (ITEC Asia-Pacific), 2014 IEEE Conference and Expo
Conference_Location
Beijing
Print_ISBN
978-1-4799-4240-4
Type
conf
DOI
10.1109/ITEC-AP.2014.6941058
Filename
6941058
Link To Document