Title :
Fully-depleted SOI CMOS for analog applications
Author :
Colinge, Jean-Pierre
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Davis, CA, USA
fDate :
5/1/1998 12:00:00 AM
Abstract :
Fully-depleted (FD) SOI MOSFETs offer near-ideal properties for analog applications. In particular their high transconductance to drain current ratio allows one to obtain a higher gain than from bulk devices, and the reduced body effect permits one to fabricate more efficient pass gates. The excellent behavior of SOI MOSFETs at high temperature or at gigahertz frequencies is outlined as well
Keywords :
CMOS analogue integrated circuits; silicon-on-insulator; FD SOI MOSFET; analog application; body effect; drain current; fully-depleted SOI CMOS; gain; gigahertz frequency operation; high temperature operation; pass gate; transconductance; Analog circuits; Analog integrated circuits; CMOS analog integrated circuits; CMOS digital integrated circuits; Capacitance; Frequency; Low voltage; MOSFET circuits; Temperature; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
