Accurate SOI MOSFET characterization at microwave frequencies for device performance optimization and analog modeling

Author

Raskin, Jean-Pierre ; Gillon, Renaud ; Chen, Jian ; Vanhoenacker-Janvier, Danielle ; Colinge, Jean-Pierre

Author_Institution

Microwave Lab., Univ. Catholique de Louvain, Belgium

Volume

45

Issue

5

fYear

1998

fDate

5/1/1998 12:00:00 AM

Firstpage

1017

Lastpage

1025

Abstract

The maturation of low-cost silicon-on-insulator (SOI) MOSFET technology in the microwave domain has brought about a need to develop specific characterization techniques. An original scheme is presented, which, by combining careful design of probing and calibration structures, rigorous in situ calibration, and a new powerful direct extraction method, allows reliable identification of the parameters of the non-quasi-static (NQS) small-signal model for MOSFETs. The extracted model is shown to be valid up to 40 GHz

Keywords

MOSFET; calibration; microwave field effect transistors; semiconductor device models; silicon-on-insulator; 40 GHz; SOI MOSFET; analog model; calibration; device performance optimization; microwave frequency; nonquasi-static small-signal model; parameter extraction; probe; Calibration; Equivalent circuits; Integrated circuit measurements; MOSFET circuits; Microwave devices; Microwave frequencies; Microwave measurements; Microwave technology; Optimization; Silicon on insulator technology;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.669514

Filename

669514