Title :
Noise contribution of the body resistance in partially-depleted SOI MOSFETs
Author :
Faccio, Federico ; Anghinolfi, Francis ; Heijne, Erik H.M. ; Jarron, Pierre ; Cristoloveanu, Sorin
Author_Institution :
CERN, Geneva, Switzerland
fDate :
5/1/1998 12:00:00 AM
Abstract :
An additional noise component is observed in the noise spectrum of transistors in a partially-depleted (PD) medium-thickness SOI-CMOS technology. We identify the origin of this additional noise in the noisy resistance of the body film. This resistance, coupled to the gate capacitance, forms an RC filter and generates the hump-shape of the additional noise component. Several experimental observations that support this model are presented
Keywords :
MOSFET; semiconductor device noise; silicon-on-insulator; CMOS transistor; RC filter; body resistance; gate capacitance; noise spectrum; partially-depleted SOI MOSFET; CMOS technology; Capacitance; Immune system; MOSFET circuits; Noise measurement; Semiconductor films; Silicon; Substrates; Transconductance; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
