Title :
Buried-channel MOSFET model for SPICE
Author :
Van der Tol, Michael J. ; Chamberlain, Savvas G.
Author_Institution :
Dept. of Electr. Eng., Waterloo Univ., Ont., Canada
fDate :
8/1/1991 12:00:00 AM
Abstract :
A buried-channel (BC) MOSFET model for DC, transient and small-signal circuit simulation, which has been incorporated into SPICE 3B1, is presented. The model includes all of the modes of operation inherent to the BC-MOSFET, including the partial modes of operation. The equivalent circuit for the BC-MOSFET is presented, and the static, transient, and small-signal equations used for SPICE implementation are systematically described. The surface and bulk mobility models used in the static current-voltage characteristic are highlighted. The charge model and the importance of incorporating all of the models of operation are illustrated. A number of examples are given to illustrate the BC-MOSFET SPICE model. It is shown that the SPICE model for the BC-MOSFET is in good agreement with experimental measurements
Keywords :
circuit analysis computing; equivalent circuits; insulated gate field effect transistors; semiconductor device models; DC simulation; MOSFET model; SPICE 3B1; SPICE model; bulk mobility models; buried-channel; charge model; equivalent circuit; partial operation modes; small-signal circuit simulation; static current-voltage characteristic; surface mobility model; transient simulation; Capacitance; Circuit simulation; Councils; Design automation; Doping; MOSFET circuits; SPICE; Scholarships; Surface treatment; Transconductance;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
