Semiconductor thickness effects in the double-gate SOI MOSFET

Author

Majkusiak, Bogdan ; Janik, Tomasz ; Walczak, Jakub

Author_Institution

Inst. of Microelectron. & Optoelectron., Warsaw Univ. of Technol., Poland

Volume

45

Issue

5

fYear

1998

fDate

5/1/1998 12:00:00 AM

Firstpage

1127

Lastpage

1134

Abstract

Influence of the semiconductor film thickness in the double-gate silicon on-insulator (SOI) MOSFET on the electron concentration distribution, electron charge density, threshold voltage, electron effective mobility, and drain current is theoretically analyzed. The consideration of the semiconductor region is based on two descriptions: the “classical” model based on a solution to the Poisson equation and the “quantum” model based on a self-consistent solution to the Schrodinger and Poisson equation system. The electron effective mobility and the drain current are calculated with the use of the local mobility model

Keywords

MOSFET; electron density; electron mobility; semiconductor device models; semiconductor thin films; silicon-on-insulator; Poisson equation; Schrodinger equation; Si; classical model; double-gate SOI MOSFET; drain current; electron charge density; electron concentration distribution; electron effective mobility; local mobility model; quantum model; self-consistent solution; semiconductor film thickness; semiconductor thickness effects; threshold voltage; Electrodes; Electron mobility; Helium; MOSFET circuits; Poisson equations; Quantization; Semiconductor device modeling; Semiconductor films; Silicon on insulator technology; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.669563

Filename

669563