On the go with SONOS

Author

White, Marvin H. ; Adams, Dennis A. ; Bu, Jiankang

Author_Institution

Dept. of Electr. Eng., Lehigh Univ., Bethlehem, PA, USA

Volume

16

Issue

4

fYear

2000

fDate

7/1/2000 12:00:00 AM

Firstpage

22

Lastpage

31

Abstract

Advancements in scaling gate insulators for MOS transistors permit low-voltage, silicon-oxide-nitride-silicon (SONOS) nonvolatile semiconductor memories (NVSMs) for a wide range of applications. The continued scaling of SONOS devices offers improved performance with a small cell size, single-level polysilicon with low voltage, fast erase/write, improved memory retention, increased endurance, and radiation hardness. In this article, we discuss scaled SONOS devices, SONOS memory technology, and some SONOS NVSM applications

Keywords

integrated circuit reliability; integrated memory circuits; radiation hardening (electronics); semiconductor-insulator-semiconductor devices; SIS structures; SONOS; SONOS nonvolatile semiconductor memories; Si-SiO₂-Si₃N₄-Si; cell size; endurance; gate insulators; memory retention; memory technology; radiation hardness; single-level polysilicon; Charge pumps; Circuits; Conductive films; Dielectric thin films; Electrodes; Nonvolatile memory; SONOS devices; Semiconductor device reliability; Temperature; Voltage;

fLanguage

English

Journal_Title

Circuits and Devices Magazine, IEEE

Publisher

ieee

ISSN

8755-3996

Type

jour

DOI

10.1109/101.857747

Filename

857747