DocumentCode
136827
Title
A physical model for high power trench gate IGBTs
Author
Jinlei Meng ; Puqi Ning ; Xuhui Wen
Author_Institution
Univ. of Chinese Acad. of Sci., Beijing, China
fYear
2014
fDate
Aug. 31 2014-Sept. 3 2014
Firstpage
1
Lastpage
5
Abstract
This paper presents a physical based model for high power trench gate Insulated Gate Bipolar Transistors (IGBTs). The presented model is developed and improved based on Fourier Based Model for IGBTs and power diodes. With the model realization based Matlab Simulink/ Pspice, the model is verified by experiments. Comparing with the conventional IGBT models, the present model gives high speed and accurate results.
Keywords
Fourier analysis; driver circuits; insulated gate bipolar transistors; power semiconductor diodes; Fourier based model; Matlab Simulink/ Pspice; high power trench gate IGBT; insulated gate bipolar transistors; power diodes; Frequency division multiplexing; Insulated gate bipolar transistors; Integrated circuit modeling; Load modeling; Logic gates; Mathematical model; Semiconductor device modeling; Fourier based model; Insulated Gate Bipolar Transistor; trench gate;
fLanguage
English
Publisher
ieee
Conference_Titel
Transportation Electrification Asia-Pacific (ITEC Asia-Pacific), 2014 IEEE Conference and Expo
Conference_Location
Beijing
Print_ISBN
978-1-4799-4240-4
Type
conf
DOI
10.1109/ITEC-AP.2014.6941099
Filename
6941099
Link To Document