Title :
A physical model for high power trench gate IGBTs
Author :
Jinlei Meng ; Puqi Ning ; Xuhui Wen
Author_Institution :
Univ. of Chinese Acad. of Sci., Beijing, China
fDate :
Aug. 31 2014-Sept. 3 2014
Abstract :
This paper presents a physical based model for high power trench gate Insulated Gate Bipolar Transistors (IGBTs). The presented model is developed and improved based on Fourier Based Model for IGBTs and power diodes. With the model realization based Matlab Simulink/ Pspice, the model is verified by experiments. Comparing with the conventional IGBT models, the present model gives high speed and accurate results.
Keywords :
Fourier analysis; driver circuits; insulated gate bipolar transistors; power semiconductor diodes; Fourier based model; Matlab Simulink/ Pspice; high power trench gate IGBT; insulated gate bipolar transistors; power diodes; Frequency division multiplexing; Insulated gate bipolar transistors; Integrated circuit modeling; Load modeling; Logic gates; Mathematical model; Semiconductor device modeling; Fourier based model; Insulated Gate Bipolar Transistor; trench gate;
Conference_Titel :
Transportation Electrification Asia-Pacific (ITEC Asia-Pacific), 2014 IEEE Conference and Expo
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-4240-4
DOI :
10.1109/ITEC-AP.2014.6941099
