Title :
Empirical correlation between AC kink and low-frequency noise overshoot in SOI MOSFETs
Author :
Tseng, Ying-Che ; Huang, Wen-Ling M. ; Welch, Pamela J. ; Ford, Jenny M. ; Woo, Jason C S
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
fDate :
5/1/1998 12:00:00 AM
Abstract :
Low-frequency (LF) noise overshoot has been empirically correlated with the frequency dependence of the kink effect in floating body SOI MOSFETs. Based on the correlation between these unique ac characteristics in SOI, a new mechanism is proposed to explain the well-known kink-related noise overshoot. Also, device solutions for suppressing LF noise overshoot will be discussed.
Keywords :
MOSFET; electric noise measurement; semiconductor device models; semiconductor device noise; silicon-on-insulator; AC characteristics; AC kink; device solutions; floating body SOI MOSFETs; frequency dependence; low-frequency noise overshoot; 1f noise; CMOS technology; Frequency dependence; Immune system; Low-frequency noise; MOSFET circuits; Noise generators; Phase noise; Radio frequency; Semiconductor device noise;
Journal_Title :
Electron Device Letters, IEEE
