Title :
A feedforward bidirectional associative memory
Author :
Wu, Yingquan ; Pados, Dimitris A.
Author_Institution :
Dept. of Electr. Eng., State Univ. of New York, Buffalo, NY, USA
fDate :
7/1/2000 12:00:00 AM
Abstract :
In contrast to conventional feedback bidirectional associative memory (BAM) network models, a feedforward BAM network is developed based on a one-shot design algorithm of O(p2(n+m)) computational complexity, where p is the number of prototype pairs and n, m are the dimensions of the input/output bipolar vectors. The feedforward BAM is an n-p-m three-layer network of McCulloch-Pitts neurons with storage capacity 2min{m,n} and guaranteed perfect bidirectional recall. The overall network design procedure is fully scalable in the sense that any number p⩽2min{m,n} of bidirectional associations can be implemented. The prototype patterns may be arbitrarily correlated. With respect to inference performance, it is shown that the Hamming attractive radius of each prototype reaches the maximum possible value. Simulation studies and comparisons illustrate and support these theoretical developments
Keywords :
computational complexity; content-addressable storage; correlation theory; feedforward; inference mechanisms; optimisation; Hamming attractive radius; I/O bipolar vectors; McCulloch-Pitts neurons; computational complexity; feedforward BAM network; feedforward bidirectional associative memory; guaranteed perfect bidirectional recall; input/output bipolar vectors; neural net; storage capacity; three-layer network; Algorithm design and analysis; Artificial neural networks; Associative memory; Computational complexity; Feedforward neural networks; Hopfield neural networks; Magnesium compounds; Neural networks; Neurons; Prototypes;
Journal_Title :
Neural Networks, IEEE Transactions on