Title :
Blue electroluminescent devices with SrGa2S4:Ce for full-color display
Author :
Inoue, Y. ; Kobayashi, K. ; Tanaka, K. ; Okamoto, S. ; Tsuchiya, Y. ; Takizawa, K.
Author_Institution :
NHK Sci. & Tech. Res. Labs., Tokyo, Japan
fDate :
9/1/1996 12:00:00 AM
Abstract :
In order to realize full-color electroluminescent (EL) displays, which are expected as a dominant candidate for the future multimedia flat panel display, blue EL devices with SrGa2S4:Ce have been prepared by molecular beam epitaxy (MBE). This paper proposes a novel deposition method employing Sr metal and Ga2S4 compound as the source materials. A single-phase SrGa2S4 layer is obtained in a Ga2S3/Sr flux ratio of 60 and at the growth temperature of 560°C. We have obtained the well-saturated blue with CIE color coordinates of x=0.14, y=0.14 and brighter blue EL devices made by optimizing the growth conditions in MBE. The maximum luminance of 70 cd/m2 in comparison with the 3 cd/m2 of our previous EL devices, is achieved at a driving frequency of 1 kHz
Keywords :
brightness; cerium; electroluminescent displays; flat panel displays; molecular beam epitaxial growth; phosphors; semiconductor epitaxial layers; semiconductor growth; strontium compounds; ternary semiconductors; 560 degC; CIE color coordinates; Ga2S3; Ga2S3/Sr flux ratio; II-III2-VI4 films; Sr; SrGa2S4; SrGa2S4:Ce; TV displays; blue electroluminescent devices; deposition method; driving frequency; full-color electroluminescent displays; growth temperature; maximum luminance; molecular beam epitaxy; multimedia flat panel display; single-phase SrGa2S4 layer; Brightness; Dielectric materials; Displays; Electroluminescent devices; Electrons; Filters; Insulation; Luminescence; Phosphors; Strontium;
Journal_Title :
Broadcasting, IEEE Transactions on