DocumentCode
1368633
Title
The quest for ballistic action: Avoiding collisions during electron transport to increase switching speeds is the goal of the ultimate transistor
Author
Bell, T.E.
Volume
23
Issue
2
fYear
1986
Firstpage
36
Lastpage
38
Abstract
After describing how ballistic electrons can be created, the author outlines a working gallium arsenide ballistic transistor. The work that has been done in creating a silicon ballistic transistor is then surveyed.
Keywords
III-V semiconductors; elemental semiconductors; field effect transistors; gallium arsenide; semiconductor technology; silicon; GaAs ballistic transistor; Si ballistic transistor; ballistic electron transistor; semiconductors; Bipolar transistors; Crystals; Gallium arsenide; Lattices; Metals; Silicon; Transistors;
fLanguage
English
Journal_Title
Spectrum, IEEE
Publisher
ieee
ISSN
0018-9235
Type
jour
DOI
10.1109/MSPEC.1986.6370997
Filename
6370997
Link To Document