Analytical nonlinear HEMT model for large signal circuit simulation

Author

Tanimoto, Takuma

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

Volume

44

Issue

9

fYear

1996

fDate

9/1/1996 12:00:00 AM

Firstpage

1584

Lastpage

1586

Abstract

A new nonlinear high electron mobility transistor (HEMT) model based on the Curtice model is described. This model introduces terms for the leakage current for subthreshold bias, drain voltage dependencies of knee voltage, drain conductance and threshold voltage, transconductance enhancement at high frequencies caused by DX centers, and the bias dependence of capacitance. Applying this model to pseudomorphic double-recessed gate HEMT´s gives an average error of 2.6% for DC current and 10% for S-parameters

Keywords

S-parameters; capacitance; circuit analysis computing; equivalent circuits; high electron mobility transistors; leakage currents; microwave field effect transistors; semiconductor device models; DC model; DX centers; RF model; S-parameters; capacitance bias dependence; drain conductance; drain voltage dependencies; high electron mobility transistor; knee voltage; large signal circuit simulation; leakage current; nonlinear HEMT model; pseudomorphic double-recessed gate HEMT; subthreshold bias; threshold voltage; transconductance enhancement; Analytical models; Circuit simulation; Frequency; HEMTs; Knee; Leakage current; MODFETs; Signal analysis; Threshold voltage; Transconductance;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.536608

Filename

536608