Title :
Ballistic electrons in compound semiconductors
Author_Institution :
Cornell Univ., Ithaca, NY, USA
Abstract :
It is pointed out that shorter transit times in transistors can be obtained by only two techniques: constructing a device with a shorter active length, and accelerating the electrons to a higher velocity with a ballistic launcher. The work that has been done on these two techniques is surveyed. Various devices incorporating ballistic injection are described.
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; high field effects; semiconductor device models; solid-state microwave devices; GaAs FET; ballistic electron injection; ballistic electron launcher; ballistic electron transistor; models; semiconductors; transit times; Aluminum; Educational institutions; Gallium arsenide; Laboratories; Logic gates; Transistors;
Journal_Title :
Spectrum, IEEE
DOI :
10.1109/MSPEC.1986.6370999
