DocumentCode :
1368659
Title :
A gallium arsenide ballistic transistor?
Author :
Nathan, M.I. ; Heiblum, M.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Volume :
23
Issue :
2
fYear :
1986
Firstpage :
45
Lastpage :
47
Abstract :
The authors review the work done in 1985 at the IBM Thomas J. Watson Research Center on measuring the ballistic transport of electrons in a gallium arsenide heterostructure hot-electron transistor. The device is referred to as the tunneling hot-electron transfer amplifier (Theta). The way in which the transistor functions as its own spectrometer is explained. The experimental results obtained with Theta are summarized. It was found that when no voltage is applied across the base-collector heterojunction, essentially only ballistic electrons are collected. These account for about 40% of the total number of electrons injected from the emitter at low temperatures. As the voltage across the collector is increased positively, up to 75% of them are collected.
Keywords :
III-V semiconductors; bipolar transistors; gallium arsenide; hot carriers; p-n heterojunctions; semiconductor device models; GaAs ballistic transistor; Theta; base-collector heterojunction; heterostructure hot-electron transistor; models; semiconductors; tunneling hot-electron transfer amplifier; Aluminum; Educational institutions; Gallium; Gallium arsenide; Semiconductor device measurement; Transistors; Tunneling;
fLanguage :
English
Journal_Title :
Spectrum, IEEE
Publisher :
ieee
ISSN :
0018-9235
Type :
jour
DOI :
10.1109/MSPEC.1986.6371000
Filename :
6371000
Link To Document :
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