• DocumentCode
    1368683
  • Title

    High mobility two-dimensional electron gas in InP/Ga0.47In0.53As heterojunctions grown by low-pressure organometallic vapour phase epitaxy

  • Author

    Thijs, P.J.A. ; Woltjer

  • Author_Institution
    Philips Res. Labs, Eindhoven
  • Volume
    24
  • Issue
    4
  • fYear
    1988
  • fDate
    2/18/1988 12:00:00 AM
  • Firstpage
    226
  • Lastpage
    227
  • Abstract
    The two-dimensional electron gas in InP/GaInAs heterojunctions, grown by LP-OMVPE, showed Hall mobilities as high as 164000 and 103000 cm2/Vs at 4 K and 80 K, respectively. A maximum Hall mobility of 172000 cm2/Vs was measured at 20 K. Shubnikov-de Haas oscillations measured at 200 mK in magnetic fields up to 20 T indicated the total absence of parallel conduction. By illuminating the sample it was possible to populate the second electrical sub-band at a total carrier density ns=4.4×1011 cm-2
  • Keywords
    Hall effect; III-V semiconductors; carrier density; carrier mobility; electron gas; gallium arsenide; indium compounds; magnetoresistance; semiconductor epitaxial layers; semiconductor growth; semiconductor junctions; vapour phase epitaxial growth; 4 to 80 K; Hall mobilities; III-V semiconductor; InP-Ga0.47In0.53As heterojunctions; Shubnikov-de Haas oscillations; carrier density; low pressure MOVPE; magnetic fields; organometallic vapour phase epitaxy; sample illumination; second electrical subband; two-dimensional electron gas;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    5620
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1368683