Highly uniform and reproducible vertical-cavity surface-emitting lasers grown by metalorganic vapor phase epitaxy with in situ reflectometry

Author

Hou, H.Q. ; Chui, H.C. ; Choquette, K.D. ; Hammons, B.E. ; Breiland, W.G. ; Geib, K.M.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

Volume

8

Issue

10

fYear

1996

Firstpage

1285

Lastpage

1287

Abstract

Vertical-cavity surface-emitting lasers (VCSELs) were grown by metalorganic vapor phase epitaxy. Excellent uniformity of Fabry-Perot cavity wavelength for VCSEL materials of /spl plusmn/0.2% across a 3-in diameter wafer was achieved. This results in excellent uniformity of the lasing wavelength and threshold current of VCSEL devices. Employing pregrowth calibrations on growth rates periodically with an in situ reflectometer, we obtained a run-to-run wavelength reproducibility for 770- and 850-nm VCSELs of /spl plusmn/0.3% over the course of more than a hundred runs.

Keywords

optical fabrication; reflectometry; semiconductor lasers; surface emitting lasers; vapour phase epitaxial growth; 3 in; 770 nm; 850 nm; Fabry-Perot cavity; MOVPE growth; VCSEL; in situ reflectometry; metalorganic vapor phase epitaxy; pregrowth calibration; threshold current; vertical-cavity surface-emitting laser; wavelength reproducibility; wavelength uniformity; Calibration; Epitaxial growth; Epitaxial layers; Inductors; Optical materials; Optical surface waves; Reflectivity; Reproducibility of results; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.536629

Filename

536629