DocumentCode
1368783
Title
Delayed self-heterodyne linewidth measurement of VCSELs
Author
Schmid, W. ; Jung, C. ; Weigi, B. ; Reiner, G. ; Michalzik, R. ; Ebeling, K.J.
Author_Institution
Dept. of Optoelectron., Ulm Univ., Germany
Volume
8
Issue
10
fYear
1996
Firstpage
1288
Lastpage
1290
Abstract
We report on high-resolution linewidth measurements of proton-implanted InGaAs-GaAs VCSELs employing the delayed self-heterodyne method. Devices with 16-μm active diameter exhibit record low linewidths of 20 MHz and 4-MHz residual linewidth. The linewidth enhancement factor is accurately determined from the ratio of induced phase to amplitude modulation indexes.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser variables measurement; semiconductor lasers; spectral line breadth; surface emitting lasers; InGaAs-GaAs; amplitude modulation index; delayed self-heterodyne method; high-resolution linewidth measurement; linewidth enhancement factor; phase modulation index; proton-implanted InGaAs-GaAs VCSEL; Amplitude modulation; Delay lines; Frequency modulation; Intensity modulation; Laser modes; Optical modulation; Phase modulation; Photodiodes; Power generation; Vertical cavity surface emitting lasers;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.536630
Filename
536630
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