مرکز منطقه ای اطلاع رساني علوم و فناوري - Monte Carlo Simulation of <formula formulatype="inline"> <img src="/images/tex/20023.gif" alt="{\\rm Al}_{x}{\\rm Ga}_{1-{x}}{\\rm As}~(x\\geq 0.6)"> </formula> Avalanche Photodiodes

DocumentCode :

1368784

Title :

Monte Carlo Simulation of ${\\rm Al}_{x}{\\rm Ga}_{1-{x}}{\\rm As}~(x\\geq 0.6)$ Avalanche Photodiodes

Author :

Sun, Wenlu ; Zheng, Xiaoguang ; Lu, Zhiwen ; Campbell, Joe C.

Author_Institution :

Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA

Volume :

Issue :

fYear :

2011

Firstpage :

1531

Lastpage :

1536

Abstract :

In this paper, a Monte Carlo model is used to investigate the impact ionization properties of Al_xGa_1-xAs with a high composition of Al (x ≥ 0.6). Two Geiger-mode avalanche photodiode (APD) structures using Al_xGa_1-xAs as the multiplication region are studied. Simulations show a strong link between the APD properties and the electric field profile. It was also found that Al_9.6Ga_0.4As APD structure has higher excess noise and more abrupt breakdown probability compared to Al_0.8Ga_0.2As.

Keywords :

Monte Carlo methods; aluminium compounds; avalanche photodiodes; ionisation; Geiger mode avalanche photodiode; Monte Carlo simulation; avalanche photodiodes; breakdown probability; electric field profile; high composition; ionization properties; Avalanche photodiodes; Gallium arsenide; Impact ionization; Monte Carlo methods; Photodetectors; Semiconductor process modeling; Avalanche photodiode; Monte Carlo simulation; breakdown probability; impact ionization; photodetector;

fLanguage :

English

Journal_Title :

Quantum Electronics, IEEE Journal of

Publisher :

ieee

ISSN :

0018-9197

Type :

jour

DOI :

10.1109/JQE.2011.2174616

Filename :

6069809

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1368784