• DocumentCode
    1368891
  • Title

    Device dependent control of chemical-mechanical polishing of dielectric films

  • Author

    Patel, Nital S. ; Miller, Gregory A. ; Guinn, Christopher ; Sanchez, Adriana Cruz ; Jenkins, Steven T.

  • Author_Institution
    Texas Instrum. Inc., Dallas, TX, USA
  • Volume
    13
  • Issue
    3
  • fYear
    2000
  • fDate
    8/1/2000 12:00:00 AM
  • Firstpage
    331
  • Lastpage
    343
  • Abstract
    This paper presents a control scheme for run-to-run control of chemical-mechanical polishing (CMP). The control scheme tracks both device pattern dependent and equipment induced disturbances. The structure of the controller is such that sensitivity to qual (unpatterned blanket oxide) wafer frequency is minimized. Additionally, prethickness variation and metrology delay are accounted for in the design. Results from applying this scheme in volume production are presented
  • Keywords
    chemical mechanical polishing; dielectric thin films; integrated circuit manufacture; process control; chemical-mechanical polishing; device dependent control; dielectric films; equipment induced disturbances; metrology delay; prethickness variation; run-to-run control; unpatterned blanket oxide; volume production; Chemicals; Delay; Dielectric films; Frequency; Metrology; Planarization; Production; Semiconductor device modeling; Semiconductor films; Thickness control;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/66.857944
  • Filename
    857944