• DocumentCode
    1368989
  • Title

    A 920-1650-nm high-current photodetector

  • Author

    Davis, G.A. ; Weiss, R.E. ; LaRue, R.A. ; Williams, K.J. ; Esman, R.D.

  • Author_Institution
    Intevac Adv. Technol. Div., Santa Clara, CA, USA
  • Volume
    8
  • Issue
    10
  • fYear
    1996
  • Firstpage
    1373
  • Lastpage
    1375
  • Abstract
    We present novel (InGa)As photodetectors which exhibit 150 mA continuous photocurrent at 2 W power dissipation. A responsivity of 0.97 A/W at 1319 nm is achieved with greater than 60% external quantum efficiency from 920 to 1650 mm. Measured dark currents are below 1 nA and bandwidths of 295 MHz are achieved. These low dark-current devices have utility to applications requiring large output current and large dynamic range.
  • Keywords
    III-V semiconductors; dark conductivity; gallium arsenide; indium compounds; infrared detectors; integrated optics; photodetectors; semiconductor quantum wells; 1 nA; 1319 nm; 150 mA; 2 W; 295 MHz; 60 percent; 920 to 1650 nm; IR detectors; InGaAs; InGaAs photodetectors; dark currents; external quantum efficiency; large dynamic range; large output current; low dark-current devices; mA continuous photocurrent; nm high-current photodetector; power dissipation; Absorption; Capacitance; Dark current; Detectors; Indium phosphide; Lattices; Optical modulation; Photodetectors; Photonic band gap; Power dissipation;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.536659
  • Filename
    536659