DocumentCode :
1369415
Title :
Quantification of Benefits and Drawbacks in Power Conversion Based on Complementary MOS Structures
Author :
Tran, Manh Hung ; Crebier, Jean Christophe ; Schaeffer, Christian
Author_Institution :
Grenoble Electr. Eng. Lab. (G2ELab), Grenoble Inst. of Technol., St. Martin d´´Hères, France
Volume :
47
Issue :
1
fYear :
2011
Firstpage :
212
Lastpage :
222
Abstract :
This paper deals with the advantages and drawbacks using complementary MOS structures in power converter. Approaching from the common-mode conducted electromagnetic interference (EMI) perspective, this paper shows, at first, how beneficial the complementary structures are. Experimental and simulation results underline the specific behavior of such structures. Then, other advantages and drawbacks are discussed and analyzed. This is made regarding the converter efficiency and the gate drivers operation for each converter leg. These issues are examined using simulations and experiments.
Keywords :
MOSFET; electromagnetic interference; power convertors; EMI perspective; common-mode conducted electromagnetic interference; complementary MOS structures; converter efficiency; gate driver operation; power conversion; Capacitors; Converters; Electromagnetic interference; Inverters; Logic gates; MOSFET circuits; Topology; Complementary MOS; MOSFET; conducted electromagnetic interference (EMI); converter efficiency; gate drivers;
fLanguage :
English
Journal_Title :
Industry Applications, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-9994
Type :
jour
DOI :
10.1109/TIA.2010.2090844
Filename :
5620971
Link To Document :
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