• DocumentCode
    1369415
  • Title

    Quantification of Benefits and Drawbacks in Power Conversion Based on Complementary MOS Structures

  • Author

    Tran, Manh Hung ; Crebier, Jean Christophe ; Schaeffer, Christian

  • Author_Institution
    Grenoble Electr. Eng. Lab. (G2ELab), Grenoble Inst. of Technol., St. Martin d´´Hères, France
  • Volume
    47
  • Issue
    1
  • fYear
    2011
  • Firstpage
    212
  • Lastpage
    222
  • Abstract
    This paper deals with the advantages and drawbacks using complementary MOS structures in power converter. Approaching from the common-mode conducted electromagnetic interference (EMI) perspective, this paper shows, at first, how beneficial the complementary structures are. Experimental and simulation results underline the specific behavior of such structures. Then, other advantages and drawbacks are discussed and analyzed. This is made regarding the converter efficiency and the gate drivers operation for each converter leg. These issues are examined using simulations and experiments.
  • Keywords
    MOSFET; electromagnetic interference; power convertors; EMI perspective; common-mode conducted electromagnetic interference; complementary MOS structures; converter efficiency; gate driver operation; power conversion; Capacitors; Converters; Electromagnetic interference; Inverters; Logic gates; MOSFET circuits; Topology; Complementary MOS; MOSFET; conducted electromagnetic interference (EMI); converter efficiency; gate drivers;
  • fLanguage
    English
  • Journal_Title
    Industry Applications, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0093-9994
  • Type

    jour

  • DOI
    10.1109/TIA.2010.2090844
  • Filename
    5620971