DocumentCode
1369415
Title
Quantification of Benefits and Drawbacks in Power Conversion Based on Complementary MOS Structures
Author
Tran, Manh Hung ; Crebier, Jean Christophe ; Schaeffer, Christian
Author_Institution
Grenoble Electr. Eng. Lab. (G2ELab), Grenoble Inst. of Technol., St. Martin d´´Hères, France
Volume
47
Issue
1
fYear
2011
Firstpage
212
Lastpage
222
Abstract
This paper deals with the advantages and drawbacks using complementary MOS structures in power converter. Approaching from the common-mode conducted electromagnetic interference (EMI) perspective, this paper shows, at first, how beneficial the complementary structures are. Experimental and simulation results underline the specific behavior of such structures. Then, other advantages and drawbacks are discussed and analyzed. This is made regarding the converter efficiency and the gate drivers operation for each converter leg. These issues are examined using simulations and experiments.
Keywords
MOSFET; electromagnetic interference; power convertors; EMI perspective; common-mode conducted electromagnetic interference; complementary MOS structures; converter efficiency; gate driver operation; power conversion; Capacitors; Converters; Electromagnetic interference; Inverters; Logic gates; MOSFET circuits; Topology; Complementary MOS; MOSFET; conducted electromagnetic interference (EMI); converter efficiency; gate drivers;
fLanguage
English
Journal_Title
Industry Applications, IEEE Transactions on
Publisher
ieee
ISSN
0093-9994
Type
jour
DOI
10.1109/TIA.2010.2090844
Filename
5620971
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