A Physics-Based Model for a SiC JFET Accounting for Electric-Field-Dependent Mobility

Author

Platania, Elisa ; Chen, Zhiyang ; Chimento, Filippo ; Grekov, Alexander E. ; Fu, Ruiyun ; Lu, Liqing ; Raciti, Angelo ; Hudgins, Jerry L. ; Mantooth, H. Alan ; Sheridan, David C. ; Casady, J. ; Santi, Enrico

Author_Institution

DIEES, Univ. of Catania, Catania, Italy

Volume

47

Issue

1

fYear

2011

Firstpage

199

Lastpage

211

Abstract

In this paper, a physical model for a SiC Junction Field Effect Transistor (JFET) is presented. The novel feature of the model is that the mobility dependence on both temperature and electric field is taken into account. This is particularly important for high-current power devices where the maximum conduction current is limited by drift velocity saturation in the channel. The model equations are described in detail, emphasizing the differences introduced by the field-dependent mobility model. The model is then implemented in Pspice. Both static and dynamic simulation results are given. The results are validated with experimental results under static conditions and under resistive and inductive switching conditions.

Keywords

SPICE; carrier mobility; field effect transistors; silicon compounds; wide band gap semiconductors; JFET; Pspice; SiC; conduction current; drift velocity saturation; dynamic simulation; electric-field-dependent mobility; high-current power devices; inductive switching condition; junction field effect transistor; resistive switching condition; static simulation; temperature-dependent mobility; Electric fields; Equations; JFETs; Logic gates; Mathematical model; Silicon; Silicon carbide; Field-dependent mobility; junction field effect transistor (JFET); physics-based model; silicon carbide (SiC);

fLanguage

English

Journal_Title

Industry Applications, IEEE Transactions on

Publisher

ieee

ISSN

0093-9994

Type

jour

DOI

10.1109/TIA.2010.2090843

Filename

5620973