DocumentCode :
1369436
Title :
Silicon-based inorganic electrets for application in micromachined devices
Author :
Amjadi, Houman ; Thielemann, Christiane
Author_Institution :
Inst. for Telecommun. & Electroacoust., Tech. Univ. of Darmstadt, Germany
Volume :
3
Issue :
4
fYear :
1996
fDate :
8/1/1996 12:00:00 AM
Firstpage :
494
Lastpage :
498
Abstract :
Layers of SiO2 and Si3N4 have good mechanical properties for application in micro-machined electret capacitor microphones. These materials are investigated as single or double layers in terms of chargeability and long-term charge stability. The main emphasis is put on the miniaturization of electret layers. The lateral dimensions of the electrets are reduced to 2 mm and the charge decay characteristics under different environmental conditions are described. According to the experimental data, multilayer samples of silicon dioxide and nitride possess good chargeability and higher charge stability compared to the well investigated single layers. Typically, the double layers loose ~10% of their surface potential when annealed for 200 min at 300°C and show a peak of the thermally stimulated current at 430°C. It can also be shown that the miniaturization of samples does not necessarily cause a faster charge decay
Keywords :
annealing; electrets; micromachining; micromechanical devices; silicon compounds; surface potential; thermally stimulated currents; 300 C; 430 C; Si3N4; SiO2; annealing; capacitor microphone; charge decay; charge stability; chargeability; double layer; inorganic electret; mechanical properties; micromachined device; miniaturization; multilayer; silicon dioxide; silicon nitride; single layer; surface potential; thermally stimulated current; Biomembranes; Capacitors; Compressive stress; Electrets; Inorganic materials; Internal stresses; Metal-insulator structures; Microphones; Silicon compounds; Stability;
fLanguage :
English
Journal_Title :
Dielectrics and Electrical Insulation, IEEE Transactions on
Publisher :
ieee
ISSN :
1070-9878
Type :
jour
DOI :
10.1109/94.536727
Filename :
536727
Link To Document :
بازگشت