Title :
The evaluation and application of wide bandgap power devices
Author :
Lixing Fu ; Xuan Zhang ; Scott, M. ; Chengcheng Yao ; Jin Wang
Author_Institution :
Ohio State Univ., Columbus, OH, USA
fDate :
Aug. 31 2014-Sept. 3 2014
Abstract :
This paper presents an overview of wide bandgap (WBG) power devices. The development and challenges of silicon carbide (SiC) and gallium nitride (GaN) power devices are summerized. A comprehensive evaluation of the performance of different devices is conducted, including static characterization and dynamic switching related tests. The paper also demonstrates the application of WBG devices in power electronic circuits. The testing results are provided to show the performance of WBG devices in different aspects.
Keywords :
III-V semiconductors; gallium compounds; power semiconductor devices; silicon compounds; wide band gap semiconductors; GaN; SiC; WBG power devices; dynamic switching; power electronic circuits; static characterization; wide bandgap power devices; Capacitors; Gallium nitride; Silicon; Silicon carbide; Switches; Switching circuits;
Conference_Titel :
Transportation Electrification Asia-Pacific (ITEC Asia-Pacific), 2014 IEEE Conference and Expo
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-4240-4
DOI :
10.1109/ITEC-AP.2014.6941195
