Title :
Microwave pnp AlGaAs/GaAs heterojunction bipolar transistor
Author :
Bayraktaroglu, B. ; Camilleri, N. ; Lambert, S.A.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
fDate :
2/18/1988 12:00:00 AM
Abstract :
The microwave performance of a pnp AlGaAs/GaAs heterojunction bipolar transistor was demonstrated for the first time. Common emitter current gains of 60 were obtained using MOCVD grown structures with 100 nm thick base layers and self-aligned emitter-base contacts. ft and fmax values were 12 and 20 GHz respectively. Under common-base configuration, 8 dB gain was obtained at 10 GHz. Device performance was characterised under CW and pulsed conditions
Keywords :
III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; solid-state microwave devices; vapour phase epitaxial growth; 10 to 20 GHz; 8 dB; AlGaAs-GaAs; III-V semiconductors; MOCVD grown structures; SHF; epitaxial growth; heterojunction bipolar transistor; microwave performance; p-n-p device; pulsed conditions; self-aligned emitter-base contacts;
Journal_Title :
Electronics Letters
