• DocumentCode
    1369655
  • Title

    Solid residue formation of RTV silicone rubber due to dry-band arcing and thermal decomposition

  • Author

    Kumagai, S. ; Wang, Xinsheng ; Yoshimura, N.

  • Author_Institution
    Dept. of Electron. Eng., Akita Univ., Japan
  • Volume
    5
  • Issue
    2
  • fYear
    1998
  • fDate
    4/1/1998 12:00:00 AM
  • Firstpage
    281
  • Lastpage
    289
  • Abstract
    In this study, the solid residue of a RTVSR (room temperature vulcanized silicone rubber) prepared in a tracking test are analyzed. By using the techniques of KBr pellet FTIR (Fourier transformed infra-red) spectroscopy and XRD (X-ray diffractometry), cristobalite SiO2, amorphous SiO2, amorphous SiO2.xH 2O (namely, silica gel) and moissanite SiC are identified in the solid residue. The TG (thermogravimetry) and TG-DTA (differential thermal analysis) are applied to study the thermal characteristics of RTVSR and the concentration of carbon which contributes to tracking of polymers is evaluated. By comparison of the solid residue of the tracking test to thermally decomposed RTVSR in air and nitrogen, models of chemical changes during the formation of the solid residue are proposed. Furthermore, it is found that RTVSR has a excellent property not to form conductive carbon
  • Keywords
    Fourier transform spectra; X-ray diffraction; arcs (electric); infrared spectra; insulator contamination; pyrolysis; silicone rubber; thermal analysis; vulcanisation; KBr pellet FTIR spectroscopy; RTVSR; X-ray diffractometry; amorphous SiO2; amorphous SiO2.xH2O; carbon concentration; cristobalite SiO2; differential thermal analysis; dry band arcing; moissanite SiC; polymer; room temperature vulcanized silicone rubber; silica gel; solid residue; thermal decomposition; thermogravimetry; tracking test; Amorphous materials; Infrared spectra; Rubber; Silicon compounds; Solids; Spectroscopy; Temperature; Testing; X-ray diffraction; X-ray scattering;
  • fLanguage
    English
  • Journal_Title
    Dielectrics and Electrical Insulation, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1070-9878
  • Type

    jour

  • DOI
    10.1109/94.671962
  • Filename
    671962