• DocumentCode
    1369735
  • Title

    Efficient Variability-Aware NBTI and Hot Carrier Circuit Reliability Analysis

  • Author

    Maricau, Elie ; Gielen, Georges

  • Author_Institution
    Dept. of Electr. Eng., Katholieke Univ., Leuven, Belgium
  • Volume
    29
  • Issue
    12
  • fYear
    2010
  • Firstpage
    1884
  • Lastpage
    1893
  • Abstract
    This paper discusses an efficient method to analyze the spatial and temporal reliability of analog and digital circuits. First, a SPICE-based reliability simulator with automatic step-size control is proposed. Both hot carrier degradation and negative bias temperature instability are included in the simulator. Next, a method to analyze the interaction between process variability effects and circuit aging is introduced. This method is based on a screening experimental design (DoE) succeeded by a set of regression DoEs, resulting in a good speed-accuracy tradeoff with a nearly linear complexity for all circuits under test. Finally, based on the DoE analysis, a circuit response surface model (RSM) is derived. The RSM is used for further circuit reliability analysis such as circuit weak spot detection and yield calculation as a function of circuit lifetime. The proposed method is validated over a broad range of both analog and digital circuits. Yield simulation time is reduced with up to three orders of magnitude, when compared to standard Monte Carlo-based techniques and while still maintaining simulation accuracy.
  • Keywords
    SPICE; circuit reliability; hot carriers; SPICE-based reliability simulation; analog circuits; automatic step-size control; circuit aging; circuit lifetime; circuit response surface model; circuit weak spot detection; circuit yield calculation; digital circuits; hot carrier circuit reliability analysis; hot carrier degradation; negative bias temperature instability; process variability effects; screening experimental design; speed-accuracy tradeoff; yield simulation time; Circuit analysis; Complexity theory; Digital circuits; Hot carriers; Integrated circuit reliability; Simulation; US Department of Energy; Design of experiments (DoE); hot carrier; negative bias temperature instability (NBTI); reliability simulation; variability-aware simulation;
  • fLanguage
    English
  • Journal_Title
    Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0070
  • Type

    jour

  • DOI
    10.1109/TCAD.2010.2062870
  • Filename
    5621034