• DocumentCode
    1369770
  • Title

    Technology 1991: the main event 64 Mb RAM

  • Author

    Watson, G.

  • Volume
    28
  • Issue
    1
  • fYear
    1991
  • fDate
    1/1/1991 12:00:00 AM
  • Firstpage
    30
  • Abstract
    The development of the first working 64 Mb RAM is discussed. Electron-beam lithography was used to define the 0.3 μm CMOS circuits needed. The size of the multilayer capacitor memory cells was shrunk to 1.3 μm2 by using tantalum oxide as the dielectric instead of the usual silicon dioxide. Some of the problems solved in developing these RAMs are examined
  • Keywords
    CMOS integrated circuits; electron beam lithography; integrated circuit technology; random-access storage; 0.3 micron; 64 Mb RAM; 64 Mbit; CMOS circuits; RAM; Ta2O5; dielectric; electron beam lithography; multilayer capacitor memory cells; CMOS memory circuits; CMOS technology; Capacitors; Dielectrics; Lithography; Nonhomogeneous media; Random access memory; Read-write memory; Silicon compounds;
  • fLanguage
    English
  • Journal_Title
    Spectrum, IEEE
  • Publisher
    ieee
  • ISSN
    0018-9235
  • Type

    jour

  • DOI
    10.1109/6.67235
  • Filename
    67235
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1369770