Title :
Technology 1991: the main event 64 Mb RAM
fDate :
1/1/1991 12:00:00 AM
Abstract :
The development of the first working 64 Mb RAM is discussed. Electron-beam lithography was used to define the 0.3 μm CMOS circuits needed. The size of the multilayer capacitor memory cells was shrunk to 1.3 μm2 by using tantalum oxide as the dielectric instead of the usual silicon dioxide. Some of the problems solved in developing these RAMs are examined
Keywords :
CMOS integrated circuits; electron beam lithography; integrated circuit technology; random-access storage; 0.3 micron; 64 Mb RAM; 64 Mbit; CMOS circuits; RAM; Ta2O5; dielectric; electron beam lithography; multilayer capacitor memory cells; CMOS memory circuits; CMOS technology; Capacitors; Dielectrics; Lithography; Nonhomogeneous media; Random access memory; Read-write memory; Silicon compounds;
Journal_Title :
Spectrum, IEEE
