Title :
Transient unbalanced current analysis and suppression for parallel-connected silicon carbide MOSFETs
Author :
Min Du ; Xiaofeng Ding ; Hong Guo ; Jiaqi Liang
Author_Institution :
Sch. of Autom. Sci. & Electr. Eng., BeiHang Univ., Beijing, China
fDate :
Aug. 31 2014-Sept. 3 2014
Abstract :
In this paper, the inevitable unbalanced current of parallel-connected Silicon Carbide (SiC) MOSFETs is analyzed, and the corresponding balanced methods are proposed. Firstly, the transient unbalanced current according to different gate resistance (Rg) and gate-source capacitance (Cgs) between two parallel-connected SiC MOSFETs are investigated. Then, the appropriate gate additional resistance is used to suppress the transient unbalanced current through realization of gate drive delay. Finally, the proposed scheme is verified by both simulation and experimental results.
Keywords :
MOSFET; silicon compounds; SiC; gate drive delay; gate resistance; gate-source capacitance; parallel-connected MOSFET; transient unbalanced current analysis; Logic gates; MOSFET; Resistance; Silicon carbide; Switches; Threshold voltage; Transient analysis;
Conference_Titel :
Transportation Electrification Asia-Pacific (ITEC Asia-Pacific), 2014 IEEE Conference and Expo
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-4240-4
DOI :
10.1109/ITEC-AP.2014.6941230
