DocumentCode
1369975
Title
Wide bandgap semiconductor materials and devices
Author
Yoder, Max N.
Author_Institution
Electron. Div., Office of Naval Res., Arlington, VA, USA
Volume
43
Issue
10
fYear
1996
fDate
10/1/1996 12:00:00 AM
Firstpage
1633
Lastpage
1636
Abstract
Given a matrix of all semiconductor materials and their properties, the highest and the lowest of these property values will almost always be associated with wide bandgap materials. The many possible combinations of these “poles and zeros” lead not only to superlative electron device performance, but to new device concepts as well. An overview of wide bandgap semiconductor properties is presented followed by several concepts for both new and enhanced devices. Finally, impediments to immediate exploitation and a time-oriented appraisal of the various materials and devices is presented
Keywords
semiconductor devices; semiconductor materials; wide band gap semiconductors; electron devices; wide bandgap semiconductor materials; Conducting materials; Dielectric materials; Electron devices; Electron mobility; Optical amplifiers; Optical materials; Photonic band gap; Semiconductor materials; Thermal conductivity; Wide band gap semiconductors;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.536807
Filename
536807
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