• DocumentCode
    1369975
  • Title

    Wide bandgap semiconductor materials and devices

  • Author

    Yoder, Max N.

  • Author_Institution
    Electron. Div., Office of Naval Res., Arlington, VA, USA
  • Volume
    43
  • Issue
    10
  • fYear
    1996
  • fDate
    10/1/1996 12:00:00 AM
  • Firstpage
    1633
  • Lastpage
    1636
  • Abstract
    Given a matrix of all semiconductor materials and their properties, the highest and the lowest of these property values will almost always be associated with wide bandgap materials. The many possible combinations of these “poles and zeros” lead not only to superlative electron device performance, but to new device concepts as well. An overview of wide bandgap semiconductor properties is presented followed by several concepts for both new and enhanced devices. Finally, impediments to immediate exploitation and a time-oriented appraisal of the various materials and devices is presented
  • Keywords
    semiconductor devices; semiconductor materials; wide band gap semiconductors; electron devices; wide bandgap semiconductor materials; Conducting materials; Dielectric materials; Electron devices; Electron mobility; Optical amplifiers; Optical materials; Photonic band gap; Semiconductor materials; Thermal conductivity; Wide band gap semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.536807
  • Filename
    536807