GaInP/InGaAs/GaAs graded barrier MODFET grown by OMVPE: design, fabrication, and device results

Author

Pereiaslavets, Boris ; Bachem, KarlHeinz ; Braunstein, Jurgen ; Eastman, Lester F.

Author_Institution

Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA

Volume

43

Issue

10

fYear

1996

fDate

10/1/1996 12:00:00 AM

Firstpage

1659

Lastpage

1664

Abstract

Ga_xIn_1-xP/Ga_yIn_1-xAs/GaAs Modulation Doped Field Effect Transistors (MODFET´s) with a pseudomorphic barrier and a pseudomorphic channel were grown by Organo Metallic Vapor Phase Epitaxy (OMVPE). This material system is promising for advanced MODFET´s on GaAs for high frequency and power applications, because of the large discontinuity in the conduction band, advantages in the processing and the capability to increase the energy separation between the bottom of the conduction band and Fermi level by compositionally grading the barriers. Record 2-dimensional Electron Gas (2-DEG) carrier densities of 3.1·10¹² cm^-2 for single-sided MODFET´s were measured. Measured RF power at 10 GHz for 0.25 pm devices was ⩾0.4 W/mm. For the first time cutoff frequencies f_T and f_max exceeding 105 and 188 GHz, respectively, were obtained for this material system with 0.1 μm gate-length MODFET´s

Keywords

Fermi level; III-V semiconductors; carrier density; conduction bands; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; microwave field effect transistors; microwave power transistors; millimetre wave field effect transistors; millimetre wave power transistors; power HEMT; power field effect transistors; two-dimensional electron gas; vapour phase epitaxial growth; 0.1 micron; 0.25 micron; 10 to 188 GHz; 2DEG carrier densities; Fermi level; Ga_xIn_1-xP/Ga_yIn_1-xAs/GaAs; GaInP-InGaAs-GaAs; HEMT; OMVPE growth; RF power applications; conduction band; cutoff frequencies; fabrication; field effect transistors; graded barrier MODFET; high frequency applications; modulation doped FET; organo metallic VPE; pseudomorphic barrier; pseudomorphic channel; two-dimensional electron gas; Composite materials; Conducting materials; Epitaxial growth; Epitaxial layers; FETs; Frequency; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.536811

Filename

536811