Title :
High-mobility strained-Si PMOSFET´s
Author :
Nayak, Deepak K. ; Goto, K. ; Yutani, A. ; Murota, J. ; Shiraki, Yasuhiro
Author_Institution :
Logic Technol. Div., Adv. Micro Devices Inc., Sunnyvale, CA, USA
fDate :
10/1/1996 12:00:00 AM
Abstract :
Operation and fabrication of a new high channel mobility strained-Si PMOSFET are presented. The growth of high-quality strained Si layer on completely relaxed, step-graded, SiGe buffer layer is demonstrated by gas source MBE. The strained-Si layer is characterized by double crystal X-ray diffraction, photoluminescence, and transmission electron microscopy. The operation of a PMOSFET is shown by device simulation and experiment. The high-mobility strained-Si PMOSFET is fabricated on strained-Si, which is grown epitaxially on a completely relaxed step-graded Si0.82Ge0.18 buffer layer on Si(100) substrate. At high vertical fields (high |Vg|), the channel mobility of the strained-Si device is found to be 40% and 200% higher at 300 K and 77 K, respectively, compared to those of the bulk Si device. In the case of the strained-Si device, degradation of channel mobility due to Si/SiO2 interface scattering is found to be more pronounced compared to that of the bulk Si device. Carrier confinement at the type-II strained-Si/SiGe-buffer interface is clearly demonstrated from device transconductance and C-V measurements at 300 K and 77 K
Keywords :
MOSFET; X-ray diffraction; carrier mobility; chemical beam epitaxial growth; elemental semiconductors; photoluminescence; semiconductor growth; silicon; transmission electron microscopy; C-V characteristics; Si-SiGe; Si-SiO2; Si/SiO2 interface scattering; SiGe buffer layer; carrier confinement; double crystal X-ray diffraction; epitaxial growth; fabrication; gas source MBE; high-mobility PMOSFET; photoluminescence; strained Si layer; transconductance; transmission electron microscopy; type-II strained-Si/SiGe-buffer interface; Buffer layers; Fabrication; Germanium silicon alloys; MOSFET circuits; Molecular beam epitaxial growth; Photoluminescence; Silicon germanium; Substrates; Transmission electron microscopy; X-ray diffraction;
Journal_Title :
Electron Devices, IEEE Transactions on
