DocumentCode :
1370077
Title :
A mesoscopic ballistic electron mixer with efficient frequency conversion at radio frequency
Author :
Cumming, David R S ; Holland, Martin C. ; Weaver, John M R ; Beaumont, Steven P.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Volume :
43
Issue :
10
fYear :
1996
fDate :
10/1/1996 12:00:00 AM
Firstpage :
1754
Lastpage :
1759
Abstract :
The voltage-current characteristic of a four-terminal mesoscopic cross is grossly nonlinear, exhibiting two clear regions of negative differential resistance (NDR). This behavior is potentially useful in millimeter wave detectors since these small devices have very low parasitic capacitance and great sensitivity. The device exploits a planar GaAs technology which lends itself to integrated systems. We have exploited one of the NDR regions (at a current of only 1.9 μA) to carry out frequency conversion. At low frequency we observed efficient frequency doubling, with the second harmonic exceeding the fundamental by up to 10 dB at the output. We have also operated the device at radio frequency (5 MHz) and demonstrated both asynchronous and heterodyne amplitude demodulation. The effect of DC current bias was examined and it was shown that biasing the device close to the NDR gave the optimum frequency conversion. A conversion loss in the heterodyne mixer circuit of 3 dB was achieved
Keywords :
III-V semiconductors; demodulation; frequency convertors; gallium arsenide; high field effects; mesoscopic systems; mixers (circuits); negative resistance devices; quantum interference devices; two-dimensional electron gas; 1.9 muA; 2DEG; 3 dB; 5 MHz; DC current bias; GaAs; NDR behavior; RF frequency conversion; V-I characteristic; asynchronous amplitude demodulation; conversion loss; four-terminal mesoscopic cross; frequency doubling; heterodyne amplitude demodulation; heterodyne mixer circuit; mesoscopic ballistic electron mixer; negative differential resistance; parasitic capacitance; planar GaAs technology; second harmonic; sensitivity; voltage-current characteristic; Demodulation; Detectors; Electrons; Frequency conversion; Gallium arsenide; Millimeter wave devices; Millimeter wave technology; Parasitic capacitance; Radio frequency; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.536821
Filename :
536821
Link To Document :
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