Title :
Harmonic balance simulation of RF injection effects in analog circuits
Author :
Hattori, Yoshiyuki ; Kato, Takatoshi ; Hayashi, Hiroaki ; Tadano, Hiroshi ; Nagase, Hiroshi
Author_Institution :
Toyota Central Res. & Dev. Labs. Inc., Aichi, Japan
fDate :
5/1/1998 12:00:00 AM
Abstract :
RF noise immunity is becoming a serious problem for integrated circuits (ICs). We have found a frequency-domain simulator [harmonic balance (HB)] to be useful for analyzing the undesired IC behavior, especially the DC output shift under the large RF injection. The simulator has the following advantages in comparison with a conventional time-domain simulator such as SPICE: (1) DC output shifts can be simulated in a very short time using a conventional bipolar transistor model and (2) steady-state current or voltage waveforms at each node in an IC are directly and easily obtained. This paper describes the methods and results of the DC shifts analysis of a bipolar transistor or a differential amplifier using the HB simulator
Keywords :
bipolar analogue integrated circuits; differential amplifiers; electromagnetic compatibility; frequency-domain analysis; harmonic analysis; integrated circuit modelling; nonlinear network analysis; radiofrequency interference; semiconductor device models; simulation; DC output shift; DC shifts analysis; EMC simulation; IC; RF injection effects; RF noise immunity; RF wave radiation; analog integrated circuits; bipolar transistor model; differential amplifier; frequency-domain simulator; harmonic balance simulation; nonlinear circuit simulator; steady-state current waveform; steady-state voltage waveform; Analytical models; Bipolar transistors; Circuit simulation; Frequency domain analysis; Harmonic analysis; Integrated circuit modeling; Integrated circuit noise; Radio frequency; Radiofrequency integrated circuits; Time domain analysis;
Journal_Title :
Electromagnetic Compatibility, IEEE Transactions on
