Title :
HEMT-HBT matrix amplifier
Author :
Paoloni, Claudio
Author_Institution :
Dipt. di Energia Elettrica, Rome Univ., Italy
fDate :
8/1/2000 12:00:00 AM
Abstract :
A novel matrix amplifier using simultaneously high electron-mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) is proposed in this paper. The amplifier includes HEMTs in the first tier and HBTs in the second tier. The HEMT-HBT matrix amplifier in comparison to the HEMT matrix amplifier presents a notable lower dc power consumption without remarkable gain and bandwidth reduction, maintaining the advantage of using HEMTs in the first tier. A theory to demonstrate that the amplifier performance can be optimized if the HBTs in the second tier are properly chosen is also proposed. A comparison among the HEMT-HBT matrix amplifier, HEMT matrix amplifier, and HBT matrix amplifier is also presented
Keywords :
HEMT integrated circuits; MMIC amplifiers; distributed amplifiers; heterojunction bipolar transistors; wideband amplifiers; HEMT-HBT matrix amplifier; MMIC amplifiers; amplifier performance; bandwidth reduction; dc power consumption; distributed amplifiers; gain reduction; Bandwidth; Energy consumption; Frequency; HEMTs; Heterojunction bipolar transistors; MODFETs; Noise figure; Power transmission lines; Transmission line matrix methods; Transmission line theory;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
