Title :
Design and performance of a Ka-band monolithic phase shifter utilizing nonresonant FET switches
Author :
Maruhashi, Kenichi ; Mizutani, Hiroshi ; Ohata, Keiichi
Author_Institution :
Photonic & Wireless Devices Res. Labs., NEC Corp., Shiga, Japan
fDate :
8/1/2000 12:00:00 AM
Abstract :
This paper describes design consideration and performance of a Ka-band monolithic phase shifter utilizing nonresonant FET switches. The switches show broad-band on/off characteristics up to 60 GHz without using inductors; thus, robust circuit design is possible for a switched-line phase shifter. To determine circuit topology, we introduce a schematic design approach. As a result, desired phase shift as well as good matching characteristics can be realized. The developed 4-bit monolithic phase shifter demonstrates an overall phase deviation less than 5° rms and an insertion loss variation less than 0.65 dB rms from 33 to 35 GHz. For all 16 states, the insertion loss is measured to be 13.1±1.1 dB and the VSWR is less than 1.6. The chip size of the monolithic phase shifter is 2.5 mm×2.2 mm
Keywords :
MMIC phase shifters; field effect MIMIC; field effect transistor switches; impedance matching; integrated circuit design; millimetre wave phase shifters; 12 to 14.2 dB; 30 to 60 GHz; Ka-band; VSWR; broad-band on/off characteristics; chip size; circuit topology; insertion loss variation; matching characteristics; monolithic phase shifter; nonresonant FET switches; phase deviation; robust circuit design; schematic design approach; switched-line phase shifter; Circuit synthesis; Circuit topology; FETs; Inductors; Insertion loss; Loss measurement; Phase shifters; Robustness; Switches; Switching circuits;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
