DocumentCode :
1370389
Title :
A 17–35 GHz Broadband, High Efficiency PHEMT Power Amplifier Using Synthesized Transformer Matching Technique
Author :
Huang, Pin-Cheng ; Tsai, Zuo-Min ; Lin, Kun-You ; Wang, Huei
Author_Institution :
Inst. of Commun. Eng. & Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume :
60
Issue :
1
fYear :
2012
Firstpage :
112
Lastpage :
119
Abstract :
This paper presents a 17 GHz to 35 GHz broadband power amplifier (PA) using 0.15-μm GaAs pHEMT technology. The synthesized transformer using microstrip line matching technique is proposed in this PA design to enhance the broadband frequency response and minimize the chip size. The design procedures are also presented. A high efficiency broadband PA in commercial 0.15 μm GaAs pHEMT process with the best P1dB of 22 dBm, Psat of 23.5 dBm, and PAE of 40% are demonstrated to verify the design concepts. This PA has the highest PAE, smallest chip size, and wide fractional bandwidth among the broadband GaAs HEMT PAs from K to Ka band.
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; microstrip lines; microwave power amplifiers; microwave transistors; GaAs; broadband PA design; broadband frequency response; broadband power amplifier; frequency 17 GHz to 35 GHz; high efficiency PHEMT power amplifier; high efficiency broadband PA; microstrip line matching technique; size 0.15 mum; synthesized transformer; Bandwidth; Broadband communication; Couplings; Impedance; Impedance matching; Inductance; Load modeling; GaAs PHEMT; Monolithic microwave integrated circuit (MMIC); broadband power amplifiers (PAs);
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2011.2170091
Filename :
6070995
Link To Document :
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