• DocumentCode
    1370473
  • Title

    GaAs switched capacitor DC-to-DC converter

  • Author

    Al-Kuran, Shihab ; Scheinberg, Norman ; Van Saders, John

  • Author_Institution
    Anadigics Inc., Warren, NJ, USA
  • Volume
    35
  • Issue
    8
  • fYear
    2000
  • Firstpage
    1121
  • Lastpage
    1127
  • Abstract
    A switched capacitor DC-to-DC negative converter fabricated in GaAs MESFET technology is introduced in this paper. The converter has an oscillator that runs at 250 kHz, and requires two external capacitors, 0.1 and 1 /spl mu/F. The converter runs off a wide range of supply voltage, 2 to 10 V, and has a typical output impedance of 75 /spl Omega/. A typical open circuit voltage conversion efficiency of 99.6% is achieved. The circuit can be integrated with other GaAs circuits to provide an on-chip negative supply. Measured, simulated and analytical results are introduced in this paper.
  • Keywords
    DC-DC power convertors; III-V semiconductors; MESFET circuits; gallium arsenide; switched capacitor networks; 2 to 10 V; 250 kHz; 99.6 percent; GaAs; GaAs MESFET technology; open circuit voltage conversion efficiency; switched capacitor DC-to-DC negative converter; Analytical models; Capacitors; DC-DC power converters; Gallium arsenide; Impedance; Integrated circuit measurements; MESFETs; Oscillators; Switching converters; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/4.859500
  • Filename
    859500