Title :
A 900-MHz 1-V CMOS frequency synthesizer
Author :
Dehng, Guang-Kaai ; Yang, Ching-Yuan ; Hsu, June-Ming ; Liu, Shen-Iuan
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
A 900-MHz 1-V frequency synthesizer has been fabricated in a standard 0.35-/spl mu/m CMOS technology. The frequency synthesizer consists of a divide-by-128/129 and 64/65 dual-modulus prescaler, phase-frequency detector, charge pump, and voltage-doubler circuit with an external voltage-controlled oscillator (VCO) and passive loop filter. The on-chip voltage-doubler circuit converts the 1-V supply voltage to the higher voltage which supplies the prescaler internally. In this way, the 900-MHz 1-V frequency synthesizer with an external VCO can be achieved. The measured phase noise is -112.7 dBc/Hz at a 100-kHz offset from the carrier, and the synthesizer dissipates 3.56 mW (not including VCOs) from a single 1-V supply when the switching frequency of the on-chip voltage doubler is 200 kHz and the power efficiency of the voltage doubler is 77.8%. The total chip area occupies 0.73 mm/sup 2/.
Keywords :
CMOS analogue integrated circuits; detector circuits; frequency synthesizers; phase locked loops; phase noise; prescalers; voltage-controlled oscillators; 0.35 micron; 1 V; 200 kHz; 3.56 mW; 77.8 percent; 900 MHz; CMOS frequency synthesizer; charge pump; dual-modulus prescaler; external voltage-controlled oscillator; on-chip voltage-doubler circuit; passive loop filter; phase noise; phase-frequency detector; power efficiency; switching frequency; CMOS technology; Charge pumps; Circuits; Frequency synthesizers; Passive filters; Phase detection; Phase frequency detector; Power measurement; Voltage; Voltage-controlled oscillators;
Journal_Title :
Solid-State Circuits, IEEE Journal of