Title :
High-frequency analysis of linearity improvement technique of common-emitter transconductance stage using a low-frequency-trap network
Author :
Fong, Keng Leong
Author_Institution :
Philips Semicond., Sunnyvale, CA, USA
Abstract :
It is well known that a low-frequency-trap network can be added to the base of an inductively-degenerated common-emitter transconductance stage to improve its third-order intercept point, but not its 1-dB compression point. High-frequency equations in Volterra series are used to explain this phenomenon. Analytical and experimental results show that the third-order intercept point increases with the capacitance within the low-frequency-trap network.
Keywords :
Volterra series; capacitance; intermodulation distortion; mixers (circuits); radiofrequency amplifiers; 1-dB compression point; Volterra series; capacitance; common-emitter transconductance stage; high-frequency analysis; linearity improvement technique; low-frequency-trap network; third-order intercept point; Capacitance; Capacitors; Circuits; Impedance; Linearity; Noise figure; Packaging; Radio frequency; Resistors; Transconductance;
Journal_Title :
Solid-State Circuits, IEEE Journal of
