مرکز منطقه ای اطلاع رساني علوم و فناوري - Postdeposition Anneal on Structural and Sensing Characteristics of High- <formula formulatype="inline"> <img src="/images/tex/243.gif" alt="\\kappa "> </formula> <formula formulatype="inline"> <img src="/images/tex/20050.gif" alt="\\hbox {Er}

Title :

Postdeposition Anneal on Structural and Sensing Characteristics of High- $\\kappa$ $\\hbox {Er}_{2} \</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Pan, Tung-Ming ; Lin, Chao-Wen ; Hsu, Ben-Ker</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author_Institution : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Dept. of Electron. Eng., Chang Gung Univ., Kwei-Shan, Taiwan</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Volume : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>33</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Issue : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>1</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fYear : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2012</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Firstpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>116</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Lastpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>118</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Abstract : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>In this letter, we develop an electrolyte-insulator-semiconductor (EIS) device using a high- κ Er<sub>2</sub> TiO<sub>5</sub> sensing membrane deposited on a Si substrate through cosputtering. We used X-ray diffraction and X-ray photoelectron spectroscopy to study the structural properties of these films annealed at various temperatures. The EIS device incorporating an Er<sub>2</sub> TiO<sub>5</sub> sensing film annealed at 900<sup>°</sup>C exhibited a higher sensitivity of 58.4 mV/pH, a lower hysteresis voltage of 4.6 mV, and a smaller drift rate of 1.2 mV/h than other annealing temperatures, presumably suggesting the formation of a well-crystallized Er<sub>2</sub>TiO<sub>5</sub> film and a thinner silicate layer at the oxide/Si interface.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>X-ray diffraction; X-ray spectroscopy; chemical sensors; erbium compounds; pH measurement; photoelectron spectroscopy; Er<sub>2</sub>TiO<sub>5</sub>; X-ray diffraction; X-ray photoelectron spectroscopy; cosputtering; electrolyte-insulator-semiconductor pH sensors; postdeposition anneal; temperature 900 degC; voltage 4.6 mV; Annealing; Biomembranes; Erbium; Hysteresis; Silicon; Temperature sensors; <formula formulatype=$ $hbox{Er}_{2}hbox{TiO}_{5}$; Drift rate; electrolyte–insulator–semiconductor (EIS); hysteresis; sensitivity;