Title :
New distributed amplifier design using transmission-gate FET´s
Author :
Imai, Y. ; Kimura, S. ; Umeda, Y. ; Enoki, T.
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
Abstract :
We propose a new distributed amplifier design using a transmission-gate FET (TGFET) whose gate is embedded in the gate-artificial line. The new technique greatly simplifies the gate-artificial-line design, with no meandering or T-junction lines. The test TGFET distributed amplifier, using 0.1-μm-gate-length InP HEMT´s showed a promising bandwidth performance of 100 GHz.
Keywords :
HEMT integrated circuits; distributed amplifiers; field effect MIMIC; millimetre wave amplifiers; wideband amplifiers; 0.1 micron; 100 GHz; EHF; InP; InP HEMT; MM-wave IC; bandwidth performance; distributed amplifier design; gate-artificial line; transmission-gate FET; Bandwidth; Coplanar waveguides; Distributed amplifiers; Electrodes; FETs; Frequency; Indium phosphide; Scattering parameters; Testing; Transmission lines;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
