Title :
A high-efficiency 94-GHz 0.15-μm InGaAs/InAlAs/InP monolithic power HEMT amplifier
Author :
Lai, R. ; Ng, G.I. ; Lo, D.C.W. ; Block, T. ; Wang, H. ; Biedenbender, M. ; Streit, D.C. ; Liu, P.H. ; Dia, R.M. ; Lin, E.W. ; Yen, H.C.
Author_Institution :
TRW Inc., Redondo Beach, CA, USA
Abstract :
We report high efficiency W-band power monolithic microwave integrated circuits (MMIC´s) using passivated 0.15 μm gate length In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As/InP HEMTs. A 0.15 μm×320 μm single stage InP power HEMT MMIC amplifier demonstrates a maximum power added efficiency of 23% with 40 mW output power and 4.9 dB power gain at 94 GHz. When biased for higher output power, 54 mW output power with 20% power added efficiency was achieved at 94 GHz. These results represent the best combination of efficiency and output power fixtured data reported to date at this frequency.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; field effect MIMIC; gallium arsenide; indium compounds; millimetre wave amplifiers; millimetre wave power amplifiers; power amplifiers; 0.15 micron; 20 to 23 percent; 4.9 dB; 40 to 54 mW; 94 GHz; EHF; In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As-InP; MIMIC; MM-wave IC; W-band; high-efficiency amplifier; monolithic power HEMT amplifier; passivated HEMT; power HEMT MMIC amplifier; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MMICs; MODFETs; Microwave integrated circuits; Monolithic integrated circuits; Power amplifiers; Power generation;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
