DocumentCode
1371056
Title
Design centring for yield and noise figure improvement of GaAs MESFETs
Author
Lee, S.B. ; Tchah, K.H.
Author_Institution
Dept. of Electron. & Commun. Eng., Korea Maritime Univ., Busan, South Korea
Volume
138
Issue
4
fYear
1991
fDate
8/1/1991 12:00:00 AM
Firstpage
467
Lastpage
473
Abstract
An algorithm to determine the optimum nominal value of geometrical and material parameters in device modelling is proposed. The algorithm uses the yield and variance prediction formula and Monte-Carlo analysis. The optimum parameters are obtained when the yield becomes maximum. The performance specification of the noise figure must also be satisfied. Another algorithm for determining the optimal noise figure is derived. The noise figure is represented by geometrical and material parameters in simple device modelling. The algorithms are applied to a GaAs MESFET
Keywords
III-V semiconductors; Monte Carlo methods; Schottky gate field effect transistors; electron device noise; gallium arsenide; semiconductor device models; GaAs; III-V semiconductors; MESFETs; Monte-Carlo analysis; design centring; device modelling; geometrical parameters; material parameters; noise figure improvement; optimum nominal value; variance prediction formula; yield;
fLanguage
English
Journal_Title
Circuits, Devices and Systems, IEE Proceedings G
Publisher
iet
ISSN
0956-3768
Type
jour
Filename
86045
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