Title :
15.6 GHz HBT microstrip oscillator
Author :
Madihian, Mohammad ; Hayama, N. ; Honjo, Kazuhiko
fDate :
2/18/1988 12:00:00 AM
Abstract :
The authors describe the design and performance of the first reported Ku-band HBT oscillator. The circuit was implemented in microstrip on an alumina substrate. The device used was a fully self-aligned AlGaAs/GaAs HBT using side wall technology. An output power of +6.5 dBm was achieved at 15.6 GHz with a collector efficiency of 11%. The phase noise was -60 dBc/Hz at 10 kHz offset, which is comparable to that of a silicon bipolar oscillator, and 20 dB less than that for a GaAs FET oscillator at the same frequency band
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; gallium arsenide; microwave integrated circuits; microwave oscillators; 11 percent; 15.6 GHz; Al2O3; AlGaAs-GaAs; HBT microstrip oscillator; III-V semiconductors; Ku-band; MMIC; SHF; alumina substrate; bipolar transistor; collector efficiency; microwave IC; monolithic type; side wall technology;
Journal_Title :
Electronics Letters
