Title :
Solution-Processed ZTO TFTs With Recessed Gate and Low Operating Voltage
Author :
Lee, Chen-Guan ; Dutta, Soumya ; Dodabalapur, Ananth
Author_Institution :
Res. Center, Univ. of Texas at Austin, Austin, TX, USA
Abstract :
We demonstrate solution-processed zinc tin oxide thin-film transistors (TFTs) with a patterned-gate configuration. High-k and solution-processed zirconium oxide (ZrO2) was employed to lower down the operating voltage. Devices with recessed and nonrecessed gate electrodes were compared to study the influence of gate surface relief on the performance of the solution-processed thin films. The TFTs with the recessed gate electrode operate at 5 V and have a threshold voltage of ~ 1 V, subthreshold slope of ~ 0.23 V/dec, saturation mobility of 2.5 cm2/V ·s, and on/off current ratio of > 106.
Keywords :
MOSFET; high-k dielectric thin films; low-power electronics; thin film transistors; zirconium compounds; ZrO2; gate surface relief; low operating voltage; patterned-gate configuration; recessed gate; solution-processed ZTO TFT; thin-film transistors; voltage 5 V; Dielectrics; Electrodes; Leakage current; Logic gates; Surface morphology; Thin film transistors; Low operating voltage; metal-oxide semiconductor; solution process; thin-film transistors (TFTs);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2081659
