Title :
Avalanche breakdown and breakdown luminescence in p-π-n GaN diodes
Author :
Osinsky, A. ; Shur, M.S. ; Gaska, R. ; Chen, Q.
Author_Institution :
APA Optics Inc., Blane, MN, USA
fDate :
4/2/1998 12:00:00 AM
Abstract :
The authors report the observation of electric breakdown in graded p-π-n GaN photodiodes. The breakdown is accompanied by microplasma formation. The photocurrent strongly increases at the breakdown voltages, demonstrating a potential use of these devices as avalanche photodiodes (APDs)
Keywords :
III-V semiconductors; avalanche breakdown; avalanche photodiodes; electroluminescence; gallium compounds; semiconductor plasma; GaN; avalanche breakdown; avalanche photodiode; breakdown luminescence; graded p-π-n GaN photodiode; microplasma formation; photocurrent;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980535
