DocumentCode
1371519
Title
Low dark current pin ultraviolet photodetectors fabricated on GaN grown by metal organic chemical vapour deposition
Author
Carrano, J.C. ; Li, Tong ; Grudowski, P.A. ; Eiting, C.J. ; Lambert, Damien ; Schaub, J.D. ; Dupuis, Russell ; Campbell, Joe C.
Author_Institution
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX
Volume
34
Issue
7
fYear
1998
fDate
4/2/1998 12:00:00 AM
Firstpage
692
Lastpage
694
Abstract
The authors report GaN pin photodetectors with very low dark currents (<10 pA at -10 V) and high external quantum efficiencies (~35%). These photodetectors have a flat responsivity above the bandgap (measured at ~0.10 A/W) with a sharp solar-blind cutoff at the band edge
Keywords
CVD coatings; III-V semiconductors; gallium compounds; p-i-n photodiodes; photodetectors; ultraviolet detectors; -10 V; 10 pA; 35 percent; GaN; dark current; external quantum efficiency; metal organic chemical vapour deposition; pin ultraviolet photodetector;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19980453
Filename
673806
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