Title :
Room temperature GaInAsSb/GaSb quantum well laser for tunable diode laser absorption spectroscopy around 2.35 μm
Author :
Vicet, A. ; Nicolas, J.-C. ; Genty, F. ; Rouillard, Y. ; Skouri, E.M. ; Baranov, A.N. ; Alibert, C.
Author_Institution :
Centre d´´Electron. et de Micro-Optoelectron., Univ. des Sci. et Tech. du Languedoc, Montpellier, France
fDate :
6/1/2000 12:00:00 AM
Abstract :
Novel GaInAsSb/GaSb multiple quantum well lasers grown by molecular beam epitaxy have successfully operated in continuous wave around 2.35 μm at room temperature. The temperature and current tuning properties have been characterised by tunable diode laser absorption spectroscopy. These optical properties allowed a wide spectral scan from 2.27 μm to 2.36 μm. Experiments of gas absorption have been carried out in direct absorption measurements in continuous wave regime. From the point of view of trace gas analysis, wavelength modulation has been successfully performed at 19°C around 2.36 μm. An external cavity has then been added to the setup to obtain monomodal emission. These appealing results are very attractive for portable low-cost and room temperature trace pollutants analysis
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared spectroscopy; laser beam applications; laser beams; laser cavity resonators; laser tuning; modulation spectroscopy; molecular beam epitaxial growth; optical fabrication; optical modulation; pollution measurement; quantum well lasers; spectrochemical analysis; 19 C; 2.27 to 2.36 mum; 2.35 mum; 2.36 mum; 298 K; GaInAsSb-GaSb; GaInAsSb/GaSb multiple quantum well lasers; GaInAsSb/GaSb quantum well laser; continuous wave laser; continuous wave regime; current tuning properties; direct absorption measurements; external cavity; gas absorption; molecular beam epitaxy; monomodal emission; optical properties; portable low-cost trace pollutants analysis; room temperature; room temperature quantum well laser; room temperature trace pollutants analysis; spectral scan; temperature; trace gas analysis; tunable diode laser absorption spectroscopy; wavelength modulation;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20000298
